Effect of gallium incorporation on the physical properties of ZnO films grown by spray pyrolysis

被引：100

作者：

Reddy, KTR

Gopalaswamy, H

Reddy, PJ

Miles, RW

机构：

[1] Northumbria Univ, Sch Engn, Newcastle Photovolta Appl Ctr, Newcastle Upon Tyne NE1 8ST, Tyne & Wear, England

[2] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 210卷 / 04期

关键词：

spray pyrolysis; zinc oxide; gallium doping; physical properties;

D O I：

10.1016/S0022-0248(99)00868-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Gallium-doped zinc oxide thin films were deposited by the spray pyrolysis technique onto Coming 7059 glass substrates at a temperature of 350 degrees C using a precursor solution of zinc acetate in isopropyl alcohol. The films were prepared using different gallium concentrations keeping the other deposition parameters such as air and solution Row rates and solution concentration constant. The variations of the structural. electrical and optical properties with the doping concentration were investigated. X-ray diffraction data showed that the films were polycrystalline with the (0 0 2) preferred orientation. The textur e coefficient and grain size were evaluated for different doping concentrations. The films with 5.0 at % gallium had a resistivity of 1.5 x 10(-3) Ohm cm and a transmittance of 85% with an energy band gap of 3.35 eV. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：516 / 520

页数：5

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