Electroless deposited CoWB for copper diffusion barrier metal

被引：15

作者：

Itabashi, T ^{[1
]}

Nakano, H ^{[1
]}

Akahoshi, H ^{[1
]}

机构：

[1] Hitachi Ltd, Hitachi Res Lab, Hitachi, Ibaraki 3191292, Japan

来源：

PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年

关键词：

D O I：

10.1109/IITC.2002.1014958

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The metal capping barrier deposited by electroless CoWB (cobalt tungsten boron) alloy plating method on damascene copper interconnects has been investigated. The metal capping barrier structure is one of the solutions to prevent the decreasing of the coupling capacity when we use the usual SiN or SiC capping barrier. In this paper, we proposed a direct electroless deposition of Co alloy on copper surfaces, using Dimethyl Amine Borane(DMAB) as a reducing agent, without a palladium catalyst.

引用

页码：285 / 287

页数：3

共 6 条

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