Molecular beam epitaxy of (Ga,Mn)N

被引：39

作者：

Kondo, T ^{[1
]}

Kuwabara, S ^{[1
]}

Owa, H ^{[1
]}

Munekata, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷 / 1-4 II期

关键词：

molecular beam epitaxy; nitrides; magnetic materials; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(01)02182-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have successfully prepared wurtzite (Ga,Mn)N epitaxial layers using RF-plasma-assisted molecular beam epitaxy. Highly resistive (Ga,Mn)N epilayers show primarily paramagnetic behavior. The results of compositional, electronic and magnetic characterizations on the epilayers suggest that 60% of Mn content in the epilayers substitute for Ga on sub-lattice sites. For epilayers with very high Mn concentrations (similar to10(21) cm(-3)), Curie-Weiss analysis has revealed the effective spin number S approximate to 2.5 together with the positive paramagnetic Curie temperatures. This suggests the presence of ferromagnetic spin exchange between Mn ions. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1353 / 1357

页数：5

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