Temporal and spectral characteristics of back-illuminated InGaAs metal-semiconductor-metal photodetectors

被引：5

作者：

Hargis, MC

Ralph, SE

Woodall, J

McInturff, D

Negri, AJ

Haugsjaa, PO

机构：

[1] PURDUE UNIV,DEPT ELECT & COMP ENGN,W LAFAYETTE,IN 47907

[2] GTE LABS INC,WALTHAM,MA 02254

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 01期

关键词：

D O I：

10.1109/68.475795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report dramatic differences in the impulse response and wavelength dependence of back versus top illuminated In0.53Ga0.47As planar metal-semiconductor-metal devices. Via direct measurement of transit-time limited devices we identify the mechanisms involved and thereby allow the optimum design of multi-Gbit, high responsivity back-illuminated devices. We show that responsivities greater than 0.8 A/W are achievable with >8 GHz bandwidth for 50-mu m-diameter devices.

引用

收藏

页码：110 / 112

页数：3

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