Structure of conduction electrons on polysilanes as studied by electron spin-echo envelope modulation analysis

The orbital structures of conduction electrons on permethylated oligosilane, Si-8(CH3)(18), and poly(cyclohexylmethylsilane) have been determined by analyzing the electron spin-echo envelope modulation signals of the radical anions of these silanes in a deuterated rigid matrix at 77 K. The conduction electron on permethylated oligosilane is delocalized over the entire main chain, whereas that on poly(cyclohexylmethylsilane) is localized on a part of the main chain composed of about six Si atoms, Quantum-chemical calculations suggest that Anderson localization due to fluctuation of sigma conjugation by conformational disorder of the main chain is responsible for the localization of both the conduction electron and the hole.