Comparison of PMMA and SU-8 resist moulds for embossing of PZT to produce high-aspect-ratio microstructures using LIGA process

被引:18
作者
Schneider, A [1 ]
Su, B
Button, TW
Singleton, L
Wilhelmi, O
Huq, SE
Prewett, PD
Lawes, RA
机构
[1] Rutherford Appleton Lab, Cent Microstruct Facil, Didcot OX11 0QX, Oxon, England
[2] Univ Birmingham Edgbaston, IRC Mat High Performance Applicat, Birmingham B15 2TT, W Midlands, England
[3] Univ Birmingham Edgbaston, Sch Mfg & Mech Engn, Birmingham B15 2TT, W Midlands, England
[4] Inst Mikrotech Mainz GmbH, D-55129 Mainz, Germany
[5] Lund Univ, Max Lab, S-22100 Lund, Sweden
来源
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2002年 / 8卷 / 2-3期
关键词
Zirconium; PMMA; Polymethylmethacrylate; Load Pressure; Void Formation;
D O I
10.1007/s00542-001-0141-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper results are presented from a range of experiments to explore the feasibility of inserting a ceramic material PZT (lead zirconium titanate) into different kinds of high-aspect-ratio resist moulds. Polymethylmethacrylate (PMMA) and SU-8 on silicon substrates and free-standing SU-8 membranes with microcavities or through-holes (defined by X-ray lithography) have been used as moulding medium. Processing conditions for the resist materials including pre-bake, exposure, post-bake, development and stripping have been compared. The advantages of different types of resist mould for the LIGA process has been evaluated. Additionally a comparison of photosensitivity of PMMA and SU-8 has been carried out. Using a range of load pressures (5 to 60 MPa), appropriate conditions for PZT embossing into resist moulds have been determined (ensuring minimum void formation in the final PZT structures). In the final form, SU-8 moulds have been removed by laser ablation. This is the first reporting of high-aspect-ratio ceramic microstructures fabricated using a combination of SU-8 moulds and PZT embossing.
引用
收藏
页码:88 / 92
页数:5
相关论文
共 9 条
[1]  
ANGELO RW, 1992, Patent No. 5102772
[2]  
Becker E. W., 1986, Microelectronic Engineering, V4, P35, DOI 10.1016/0167-9317(86)90004-3
[3]   Use of SU-8 photoresist-for very high aspect ratio x-ray lithography [J].
Bogdanov, AL ;
Peredkov, SS .
MICROELECTRONIC ENGINEERING, 2000, 53 (1-4) :493-496
[4]  
GELORME JD, 1989, Patent No. 4882245
[5]  
GLASHAUSER W, 1980, Patent No. 3039110
[6]   Micromachining applications of a high resolution ultrathick photoresist [J].
Lee, KY ;
LaBianca, N ;
Rishton, SA ;
Zolgharnain, S ;
Gelorme, JD ;
Shaw, J ;
Chang, THP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06) :3012-3016
[7]   Mask prototyping for ultra-deep X-ray lithography: preliminary studies for mask blanks and high-aspect-ratio absorber patterns [J].
Malek, CK .
MATERIALS AND DEVICE CHARACTERIZATION IN MICROMACHINING, 1998, 3512 :277-285
[8]  
SCHNEIDER A, 2000, MICR 2 INT WORKSH MI, P141
[9]  
SU B, 2001, UNPUB 4 INT HARMST W