Localization and capacitance fluctuations in disordered Au nanojunctions

被引:9
作者
Bowman, M [1 ]
Anaya, A [1 ]
Korotkov, AL [1 ]
Davidovic, D [1 ]
机构
[1] Georgia Inst Technol, Atlanta, GA 30332 USA
关键词
D O I
10.1103/PhysRevB.69.205405
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanojunctions, containing atomic-scale gold contacts between strongly disordered leads, exhibit different transport properties at room temperature and at low temperature. At room temperature, the nanojunctions exhibit conductance quantization effects. At low temperatures, the contacts exhibit Coulomb blockade. We show that the differences between the room-temperature and low-temperature properties arise from the localization of electronic states in the leads. The charging energy and capacitance of the nanojunctions exhibit strong fluctuations, with applied magnetic field at low temperature, as predicted theoretically.
引用
收藏
页码:205405 / 1
页数:8
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