Dynamics-induced surface metallization of Si(100)

被引：39

作者：

Gavioli, L

Betti, MG

Mariani, C

机构：

[1] Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica, Universitá di Modena, Modena, I-41100

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.77.3869

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

High-temperature surface metallization of Si(100) is observed at T > 900 K by high-resolution electron-energy-loss and ultraviolet photoemission spectroscopy. Metallization takes place well below the incomplete surface melting temperature and is consistent with the Si dimer dynamics, characterized by an instantaneous symmetriclike dimer configuration. The surface free carrier concentration in the metallic phase has been evaluated, reaching (at 1170 K) the same order of magnitude of the surface dimer density.

引用

页码：3869 / 3872

页数：4

共 46 条

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