Titanium impurities in silicon, diamond, and silicon carbide

被引：4

作者：

Assali, LVC

Machado, WVM

Justo, JF

机构：

[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, SP, Brazil

[2] Univ Sao Paulo, Escola Politecn, BR-05424970 Sao Paulo, SP, Brazil

来源：

BRAZILIAN JOURNAL OF PHYSICS | 2004年 / 34卷 / 2B期

关键词：

D O I：

10.1590/S0103-97332004000400016

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We carried a theoretical investigation on the electronic and structural properties of titanium impurities in silicon, diamond, and silicon carbide. The calculations were performed using the spin-polarized full-potential linearized augmented plane wave method in the supercell approach. The atomic configurations and transition and formation energies of isolated Ti impurities were computed.

引用

收藏

页码：602 / 604

页数：3

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