Electronic band structure of highly mismatched GaN1-xSbx alloys in a broad composition range

被引：25

作者：

Segercrantz, N. ^{[1
,2
]}

Yu, K. M. ^{[2
,3
]}

Ting, M. ^{[2
,4
]}

Sarney, W. L. ^{[5
]}

Svensson, S. P. ^{[5
]}

Novikov, S. V. ^{[6
]}

Foxon, C. T. ^{[6
]}

Walukiewicz, W. ^{[2
]}

机构：

[1] Aalto Univ, Dept Appl Phys, FIN-00076 Aalto Espoo, Finland

[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

[4] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA

[5] US Army Res Lab, Adelphi, MD 20783 USA

[6] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 14期

基金：

英国工程与自然科学研究理事会;

关键词：

ENERGY;

D O I：

10.1063/1.4932592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we study the optical properties of GaN1-xSbx thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 degrees C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model that is applicable to highly mismatched alloys such as GaN1-xSbx in the entire composition range. The presented model allows us to more accurately determine the band gap as well as the band edges over the entire composition range thereby providing means for determining the composition for; e.g.; efficient spontaneous photoelectrochemical cell applications. (C) 2015 AIP Publishing LLC.

引用

页数：4

共 33 条

[1] Two-photon excitation in an intermediate band solar cell structure [J].