Valence-band anticrossing in mismatched III-V semiconductor alloys

被引：342

作者：

Alberi, K. ^{[1
]}

Wu, J.

Walukiewicz, W.

Yu, K. M.

Dubon, O. D.

Watkins, S. P.

Wang, C. X.

Liu, X.

Cho, Y. -J.

Furdyna, J.

机构：

[1] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[3] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

[4] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.75.045203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show that the band gap bowing trends observed in III-V alloys containing dilute concentrations of Sb or Bi can be explained within the framework of the valence-band anticrossing model. Hybridization of the extended p-like states comprising the valence band of the host semiconductor with the close-lying localized p-like states of Sb or Bi leads to a nonlinear shift of the valence-band edge and a reduction of the band gap. The two alloys GaSbxAs1-x and GaBixAs1-x are explored in detail, and the results are extrapolated to additional systems.

引用

页数：6

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