Band gap of GaAs1-xBix, 0<x<3.6%

被引：381

作者：

Francoeur, S ^{[1
]}

Seong, MJ

Mascarenhas, A

Tixier, S

Adamcyk, M

Tiedje, T

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Univ British Columbia, Dept Phys, AMPEL, Vancouver, BC V6T 1Z4, Canada

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 22期

关键词：

D O I：

10.1063/1.1581983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The band gap of GaAsBi epitaxial layers as a function of bismuth concentration up to 3.6% is determined. The optical transitions were measured by modulated electroreflectance. The energy of the band gap decreases at a linearized rate of 88 meV/% Bi, or 83 meV/% Bi for the heavy hole to conduction band transition for GaAsBi strained to GaAs. The valence-band splitting increases faster than that of GaAs under similar compressive strain whereas the temperature dependence of the observed GaAsBi transitions is similar to that of GaAs. (C) 2003 American Institute of Physics.

引用

页码：3874 / 3876

页数：3

共 16 条

[1]

Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109

[2]

ASPNES DE, 1967, PHYS REV, V153, P153

[3] PHOTOLUMINESCENCE OF INASBI AND INASSBBI GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].