Dip-coating of ITO films

被引：76

作者：

Takahashi, Y

Okada, S

Tahar, RBH

Nakano, K

Ban, T

Ohya, Y

机构：

[1] Department of Chemistry, Faculty of Engineering, Gifu University, Gifu 501-11, 1-1, Yanagido

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1997年 / 218卷

关键词：

D O I：

10.1016/S0022-3093(97)00199-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Uniform, transparent indium tin oxide (ITO) films were prepared by dip-coating process using an organic sol composed of indium acetate-diethanolamine-tin octylate-n-propanol mixture and the relationship between their electrical properties, film morphology and dip-coating conditions have been investigated. The optimum Sn-doping concentration was about 4 mol% relative to In ion. The conductivity of as-prepared ITO films increased with an increase in firing temperature. Multiple coating of the layers as thin as a few tens of nanometers accelerated the growth of the ITO crystals and increased the conductivity of formed films. Thus, ITO films with a resistivity of 4 x 10(-4) Omega cm could be obtained by dip-coating and by subsequent post annealing in nitrogen. Through this study we conclude that the conductivity of dip-coated films was mainly controlled by the crystallite size and, hence, by carrier mobility. (C) 1997 Elsevier Science B.V.

引用

页码：129 / 134

页数：6

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