Low-energy ion-induced electron emission from a MgO(100) thin film: The role of the MgO-substrate interface

被引:43
作者
Matulevich, YT
Vink, TJ
van Emmichoven, PAZ
机构
[1] Univ Utrecht, Debye Res Inst, NL-3508 TA Utrecht, Netherlands
[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
关键词
D O I
10.1103/PhysRevLett.89.167601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present a detailed study of the electron emission from a thin MgO(100) film on a Mo substrate, bombarded with slow He+, Ne+, and Ar+ ions. Neither the high absolute number of emitted electrons per incoming ion nor the electron spectra can be due to Auger neutralization of the incoming ions at the MgO surface alone. Therefore, an additional mechanism is proposed: holes created in the MgO film are transported to the MgO-substrate interface where they give rise to an Auger neutralization process involving two electrons from the metal substrate conduction band.
引用
收藏
页码:167601/1 / 167601/4
页数:4
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