Al-doped ZnO nanocrystals

被引：59

作者：

Kadam, Pratibha ^{[1
]}

Agashe, Chitra ^{[2
]}

Mahamuni, Shailaja ^{[1
]}

机构：

[1] Univ Poona, Dept Phys, Pune 411007, Maharashtra, India

[2] Solcoat Consultants, Pune 411038, Maharashtra, India

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 10期

关键词：

carrier density; electrochemistry; energy gap; II-VI semiconductors; materials preparation; nanostructured materials; nanotechnology; semiconductor doping; wide band gap semiconductors; zinc compounds;

D O I：

10.1063/1.3020527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al(3+)-doped ZnO nanocrystals were differently obtained by wet chemical and an electrochemical route. An increase in forbidden gap due to change in crystal size and also due to Al(3+) doping in ZnO is critically analyzed. The Moss-Burstein type shift in Al(3+)-doped ZnO nanocrystals provides an evidence of successful Al(3+) doping in ZnO nanocrystals. The possibility of varying the carrier concentration in ZnO nanocrystals is the indirect implication of the present investigations.

引用

页数：4

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