Pt/p-strained-Si schottky diode characteristics at low temperature

被引：11

作者：

Chattopadhyay, S

Bera, LK

Ray, SK

Maiti, CK

机构：

[1] INDIAN INST TECHNOL,DEPT ELECT & ELECT COMMUN ENGN,KHARAGPUR 721302,W BENGAL,INDIA

[2] INDIAN INST TECHNOL,DEPT PHYS,KHARAGPUR 721302,W BENGAL,INDIA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 07期

关键词：

D O I：

10.1063/1.119696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Schottky barrier height and ideality factor of Pt on p-type strained Si (grown on a graded relaxed Si0.82Ge0.18 buffer layer) have been investigated in the temperature range (90-150 K) using the current-voltage characteristics and are found to be temperature dependent, while the ideality factor decreases with an increase in temperature, the barrier height increases, Simulation based on a drift-diffusion emission model has been used to explain the experimental results. (C) 1997 American Institute of Physics.

引用

页码：942 / 944

页数：3

共 18 条

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ABEOLFOTOH MO, 1989, PHYS REV B, V39, P5070

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