High speed P-type SiGe modulation-doped field-effect transistors

We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFET's) with 0.7-mu m and 1-mu m gate-lengths having unity current-gain cut-off frequencies (f(T)) of 9.5 GHz and 5.3 GHz, respectively, The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The de maximum extrinsic transconductance (g(m)) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-mu m gate length devices, The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few mu A/mm at room temperature and a few nA/mm at 77 K.