P-TYPE SIGE CHANNEL MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH POST-EVAPORATION PATTERNED SUBMICROMETER SCHOTTKY GATES

Schottky gate biased p-type MODFETs with an Si0.65Ge0.35 channel are presented. A wet-chemical post-evaporation procedure of the Schottky gates allows the reduction of the gate length L(G) to submicrometre dimensions (0.5 mum). The gate length dependence of the transconductance g(me) and g(mi) is reported. Maximum values are 37 or 103 mS/mm at 300 or 77 K. The devices work in the enhancement mode.