Photoluminescence dynamics of amorphous Si/SiO2 quantum wells

被引：33

作者：

Kanemitsu, Y ^{[1
]}

Iiboshi, M ^{[1
]}

Kushida, T ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 16期

关键词：

D O I：

10.1063/1.126295

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied photoluminescence (PL) spectrum and dynamics of amorphous silicon (a-Si) based quantum wells at low temperatures. In a-Si/SiO2 quantum-well samples with thin a-Si layers, the PL spectra appear in the visible spectral region. With a decrease of the a-Si well thickness, the PL peak energy shifts to higher energy and the PL lifetime becomes shorter. The well-thickness and temperature dependence of the PL lifetime show that the nonradiative recombination of carriers occurs at the a-Si/SiO2 interface and the lifetime is determined by the energy relaxation process in the a-Si well and the carrier diffusion to the interface. The quantum confinement and localization of carriers in a-Si/SiO2 quantum-well structures will be discussed. (C) 2000 American Institute of Physics. [S0003-6951(00)00716-6].

引用

页码：2200 / 2202

页数：3

共 19 条

[1]

Allan G, 1998, MATER RES SOC SYMP P, V486, P299

[2] Electronic structure of amorphous silicon nanoclusters [J].

Allan, G ;

Delerue, C ;

Lannoo, M .

PHYSICAL REVIEW LETTERS, 1997, 78 (16) :3161-3164

[3] The structural and luminescence properties of porous silicon [J].

Cullis, AG ;

Canham, LT ;

Calcott, PDJ .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :909-965

[4] A model of size-dependent photoluminescence in amorphous silicon nanostructures: Comparison with observations of porous silicon [J].

Estes, MJ ;

Moddel, G .

APPLIED PHYSICS LETTERS, 1996, 68 (13) :1814-1816

[5] Photoluminescent spectrum and dynamics of Si+-ion-implanted and thermally annealed SiO2 glasses [J].

Kanemitsu, Y ;

Shimizu, N ;

Komoda, T ;

Hemment, PLF ;

Sealy, BJ .

PHYSICAL REVIEW B, 1996, 54 (20) :14329-14332

[6] Photoluminescence from Si/SiO2 single quantum wells by selective excitation [J].

Kanemitsu, Y ;

Okamoto, S .

PHYSICAL REVIEW B, 1997, 56 (24) :R15561-R15564

[7] LIGHT-EMISSION FROM POROUS SILICON AND RELATED MATERIALS [J].

KANEMITSU, Y .

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1995, 263 (01) :1-+

[8] Quantum confined luminescence in Si/SiO2 superlattices [J].

Lockwood, DJ ;

Lu, ZH ;

Baribeau, JM .

PHYSICAL REVIEW LETTERS, 1996, 76 (03) :539-541

[9] OPTICAL AND ELECTRICAL-PROPERTIES OF A-SI3N4-H/A-SI-H SUPERLATTICES PREPARED BY PLASMA-ENHANCED NITRIDATION TECHNIQUE [J].

MIYAZAKI, S ;

YAMADA, K ;

HIROSE, M .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 :1119-1122

[10] AMORPHOUS-SILICON SUPERLATTICES PREPARED BY DIRECT PHOTOCHEMICAL DEPOSITION [J].

MIYAZAKI, S ;

HIROSE, M .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1989, 60 (01) :23-34

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