Ion beam etching of CVD diamond film in Ar, Ar/O2 and Ar/CF4 gas mixtures

被引：25

作者：

Leech, PW

Reeves, GK

Holland, AS

Shanks, F

机构：

[1] CSIRO, Div Mfg Sci & Technol, Clayton, Vic, Australia

[2] RMIT Univ, Sch Electy & Comp Syst Engn, Melbourne, Vic, Australia

[3] Monash Univ, Dept Chem, Clayton, Vic 3168, Australia

来源：

基金：

澳大利亚研究理事会;

关键词：

diamond films; ion beam etching;

D O I：

10.1016/S0925-9635(01)00605-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Ar+ ion beam etching of diamond in the presence of O-2 or CF4 gases was examined as a function of ion energy and gas composition. The details of etch rate and the structural features of the etched surfaces have been interpreted in terms of the mechanism of etching. In all cases, the etch rate has shown a square root dependence on ion energy, E-i(1/2). The etching of the diamond film in Ar/O-2 gases was characterised by a moderate etch rate (12-20 nm/min) dependent on the percentage of O-2 and has been attributed to ion-enhanced chemical etching. In comparison, the etching with Ar+ ions or Ar+ in the presence of CF4 has shown a low etch rate (8-10 nm/min) which was insensitive to variation in CF4 percentage indicative of sputter etching. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：833 / 836

页数：4

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