High VOC dye sensitised solar cell using RF-sputtered TiO2 compact layers

被引：13

作者：

Shanmugam, M. ^{[1
]}

Baroughi, M. Farrokh ^{[1
]}

Galipeau, D. ^{[1
]}

机构：

[1] S Dakota State Univ, Dept Elect Engn & Comp Sci, Brookings, SD 57007 USA

来源：

ELECTRONICS LETTERS | 2009年 / 45卷 / 12期

基金：

美国国家科学基金会;

关键词：

FILMS;

D O I：

10.1049/el.2009.3527

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Presented is a dye sensitised solar cell (DSSC) with very high open circuit voltage (V-oc) and shunt resistance (R-SH) using an RF- sputtered titanium dioxide compact layer. TiO2 films of about 100 nm thickness were RF- sputtered at room temperature on indium-tin-oxide coated glass substrates and used as the compact layer for fabrication of DSSCs. Current-voltage characteristics of the DSSCs under AM 1.5 illumination condition showed a very high V-OC of 780 mV, high RSH of 400 K Omega, short circuit current density (J(sc)) of 12.3 mA/cm(2), and fill factor (FF) of 0.61, while the V-OC, R-SH, J(SC), and FF of a DSSC fabricated using a conventional sol-gel processed TiO2 compact layer were 520 mV, 463 Omega, 5.4 mA/cm(2), and 0.46, respectively.

引用

页码：648 / U21

页数：2

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