Ruthenium gate electrodes on SiO2 and HfO2:: Sensitivity to hydrogen and oxygen ambients

被引：44

作者：

Pantisano, L.

Schram, T.

Li, Z.

Lisoni, J. G.

Pourtois, G.

De Gendt, S.

Brunco, D. P.

Akheyar, A.

Afanas'ev, V. V.

Shamuilia, S.

Stesmans, A.

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Infineon Technol, B-3001 Louvain, Belgium

[3] Univ Louvain, Dept Phys & Astron, B-3001 Louvain, Belgium

[4] Univ Louvain, Dept Chem, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 24期

关键词：

D O I：

10.1063/1.2212288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The incorporation of chemical species during annealing at the interface between the Ru gate electrode and the dielectric perturbs the electrostatic potential, thus affecting the effective work function of the metal. For both SiO2 and HfO2 gate dielectrics, O-2 anneal at 550 degrees C leads to Ru oxidation (i.e., to RuOx formation) at the Ru/dielectric interface, resulting in a higher effective work function than that of metallic Ru. In turn, when RuOx is exposed to hydrogen, a work function reduction occurs, caused by either a reduction of RuOx into Ru or hydroxyl incorporation at the interface.

引用

页数：3

共 14 条

[1] Properties of combined TiN and Pt thin films applied to gas sensing [J].