Large Electric Field Effect in Electrolyte-Gated Manganites

被引：174

作者：

Dhoot, Anoop Singh ^{[1
]}

Israel, Casey ^{[2
]}

Moya, Xavier ^{[2
]}

Mathur, Neil D. ^{[2
]}

Friend, Richard Henry ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 13期

关键词：

MIXED-VALENCE MANGANITES; TRANSISTORS; TRANSITION; INSULATOR;

D O I：

10.1103/PhysRevLett.102.136402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied electrostatic field-induced doping in La(0.8)Ca(0.2)MnO(3) transistors using electrolyte as a gate dielectric. For positive gate bias, electron doping drives a transition from a ferromagnetic metal to an insulating ground state. The thickness of the electrostatically doped layer depends on bias voltage but can extend to 5 nm requiring a field doping of 2x10(15) charges per cm(2) equivalent to 2.5 electrons per unit cell area. In contrast, negative gate voltages enhance the metallic conductivity by 30%.

引用

页数：4

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