Electrothermal effects at the microscale and their consequences on system design

被引:21
作者
Jungen, Alain [1 ]
Pfenninger, Marc [1 ]
Tonteling, Marc [1 ]
Stampfer, Christoph [1 ]
Hierold, Christofer [1 ]
机构
[1] Swiss Fed Inst Technol, CH-8092 Zurich, Switzerland
关键词
Thermoelectricity;
D O I
10.1088/0960-1317/16/8/027
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electrothermal devices exhibit increasing secondary effects upon downscaling. These effects alter their temperature profiles and thermal energy distributions. Based on scaling laws, we show that the Thomson effect is increased over Joule heating as the structures are sized down. Thermal models are upgraded to take into account this secondary effect, and finite element simulations together with experimental runs validate them.
引用
收藏
页码:1633 / 1638
页数:6
相关论文
共 33 条
[31]   Test structures to measure the seebeck coefficient of CMOS IC polysilicon [J].
vonArx, M ;
Paul, O ;
Baltes, H .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1997, 10 (02) :201-208
[32]  
VONARX M, 1998, THESIS ETH ZURICH
[33]   An electro-thermal bimorph-based microactuator for precise track-positioning of optical disk drives [J].
Yang, JP ;
Deng, XC ;
Chong, TC .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2005, 15 (05) :958-965