Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor

被引：136

作者：

Lind, Erik ^{[1
]}

Persson, Ann I. ^{[1
]}

Samuelson, Lars ^{[1
]}

Wernersson, Lars-Erik ^{[1
]}

机构：

[1] Lund Univ, Solid State Phys Nanometer Struct Consortium, S-22100 Lund, Sweden

来源：

NANO LETTERS | 2006年 / 6卷 / 09期

关键词：

D O I：

10.1021/nl052468b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An n-type InAs/InAsP heterostructure nanowire field-effect transistor has been fabricated and compared with a homogeneous InAs field-effect transistor. For the same device geometry, by introduction of the heterostructure, the threshold voltage is shifted 4 V, the maximum current on-off ratio is enhanced by a factor of 10 000, and the subthreshold swing is lowered by a factor 4 compared to the homogeneous transistor. At the same time, the drive current remains constant for a fixed gate overdrive. A single nanowire heterostructure transistor has a transconductance of 5 mu A/V at a low source-drain voltage of 0.3 V. For the homogeneous InAs transistor, we deduced a high electron mobility of 1500 cm(2)/Vs.

引用

页码：1842 / 1846

页数：5

共 14 条

[11] IMPACT OF SURROUNDING GATE TRANSISTOR (SGT) FOR ULTRA-HIGH-DENSITY LSIS [J].

TAKATO, H ;

SUNOUCHI, K ;

OKABE, N ;

NITAYAMA, A ;

HIEDA, K ;

HORIGUCHI, F ;

MASUOKA, F .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) :573-578

[12] Electron transport in InAs nanowires and heterostructure nanowire devices [J].

Thelander, C ;

Björk, MT ;

Larsson, MW ;

Hansen, AE ;

Wallenberg, LR ;

Samuelson, L .

SOLID STATE COMMUNICATIONS, 2004, 131 (9-10) :573-579

[13] Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics [J].

Wang, DW ;

Wang, Q ;

Javey, A ;

Tu, R ;

Dai, HJ ;

Kim, H ;

McIntyre, PC ;

Krishnamohan, T ;

Saraswat, KC .

APPLIED PHYSICS LETTERS, 2003, 83 (12) :2432-2434

[14]

Wernersson LE, 2005, INT EL DEVICES MEET, P273

← 1 2 →