Oxidation kinetics of TiN layers: Exposed and beneath Pt thin films

被引：29

作者：

McIntyre, PC

Summerfelt, SR

Maggiore, CJ

机构：

[1] TEXAS INSTRUMENTS INC,MAT SCI LAB,DALLAS,TX 75243

[2] LOS ALAMOS NATL LAB,CTR MAT SCI,LOS ALAMOS,NM 87545

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 06期

关键词：

D O I：

10.1063/1.118247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxidation kinetics are reported for thin films of TiN, both directly exposed to a dry oxygen ambient and beneath polycrystalline Pt films of similar to 100 nm thickness. Oxygen resonance backscattering spectrometry was used to detect thin oxide layers at the Pt/TiN interface produced by oxidation annealing at 550-650 degrees C. A linear oxidation rate law was observed for the buried TiN film, indicating the oxidation rate is independent of average titanium oxide thickness. The linear rate constant had an activation enthalpy of 2.4+/-0.1 eV. (C) 1997 American Institute of Physics.

引用

页码：711 / 713

页数：3

共 16 条

[1]

CHENG HS, 1993, NUCL INSTRUM METH B, V83, P449

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