High quantum efficiency solar-blind photodetectors

被引：25

作者：

McClintock, R ^{[1
]}

Yasan, A ^{[1
]}

Mayes, K ^{[1
]}

Shiell, D ^{[1
]}

Darvish, SR ^{[1
]}

Kung, P ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Northwestern Univ, Ctr Quantum Devices, Evanston, IL 60201 USA

来源：

QUANTUM SENSING AND NANOPHOTONIC DEVICES | 2004年 / 5359卷

关键词：

AlGaN; back-illuminated; p-i-n; photodetector; solar blind; ultraviolet;

D O I：

10.1117/12.529348

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report AlGaN-based back-illuminated solar-blind p-i-n photodetectors with a record peak responsivity of 150 mA/W at 280 nm, corresponding to a high external quantum efficiency of 68%, increasing to 74% under 5 volts reverse bias. Through optimization of the p-AlGaN layer, we were able to remove the out-of-band negative photoresponse originating from the Schottky-like p-type metal contact, and hence significantly improve the degree of solar-blindness. We attribute the high efficiency of these devices to the use of very-high quality AlN and Al0.87Ga0.13N/AlN superlattice material, a highly conductive Si-In co-doped Al0.5Ga0.5N layer, and the elimination of the negative photoresponse through improvement of the p-type AlGaN.

引用

页码：434 / 444

页数：11

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