Design of high-Q varactors for low-power wireless applications using a standard CMOS process

被引:110
作者
Porret, AS [1 ]
Melly, T [1 ]
Enz, CC [1 ]
Vittoz, EA [1 ]
机构
[1] Swiss Fed Inst Technol, CH-1015 Lausanne, Switzerland
关键词
low-power design; oscillators; RF CMOS; varactors; voltage-controlled oscillators; wireless communication;
D O I
10.1109/4.826815
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
New applications such as wireless integrated network sensors (WINS) require radio-frequency transceivers consuming very little power compared to usual mainstream applications, while still working in the ultra-high-frequency range. For this kind of applications, the LC-tank-based local oscillator remains a significant contributor to the overall receiver power consumption, This statement motivates the development of good on-chip varactors available in a standard process, This paper describes and compares the available solutions to realize high-e, highly tunable varactors in a standard digital CMOS submicrometer process. On this basis, quality factors in excess of 100 at 1 GHz, for a tuning ratio reaching two, have been measured using a 0.5-mu m process.
引用
收藏
页码:337 / 345
页数:9
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