Photoluminescence and waveguiding in sputtered films of Er-doped chalcogenide glasses

被引:7
作者
Fuchs, A [1 ]
Fick, J [1 ]
Balan, V [1 ]
Vigreux, C [1 ]
Pradel, A [1 ]
机构
[1] ENSERG, CNRS, UJF, UMR 5130,Inst Microelect Electromagnetisme & Phot, F-38016 Grenoble, France
来源
INTEGRATED OPTICS AND PHOTONIC INTEGRATED CIRCUITS | 2004年 / 5451卷
关键词
channel waveguides; RF sputtering; thin-films; rare-earth-doping; chalcogenide glasses; AFM; photoluminescence;
D O I
10.1117/12.545740
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The spectral properties of Er3+-doped As2S3 and Ge33As12Se55 chalcogenide glasses are presented and discussed. Bulk samples and thin films have been studied. Bulk samples have been obtained by melt-quenching. Thin films have been obtained by RF sputtering. Sputtering targets have been fabricated from home-made cut and polished doped bulk samples and from commercial undoped targets with erbium pieces on the surface. The film morphology has been analysed by AFM and a column-like structure has been observed for the Ge33As12Se55 films. The presence of Er3+ ions in As2S3 and Ge33As12Se55 films has been confirmed by PL emission at 1.55 mum. A PL lifetime of 4 ms has been measured in Er-doped As2S3 films. Single mode waveguides have been fabricated by wet etching in Ge33As12Se55 films.
引用
收藏
页码:327 / 336
页数:10
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