Optical properties of multilayered porous silicon

被引:60
作者
Setzu, S
Ferrand, P
Romestain, R
机构
[1] Univ Grenoble 1, Spectrometrie Phys Lab, CNRS, UMR 5588, F-38402 St Martin Dheres, France
[2] INFM, Consorzio PROMEA, Sez Cagliari, Dipartimento Fis, I-09042 Monserrato, CA, Italy
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 69卷
关键词
porous silicon; microcavity; roughness; photoluminescence; emission; calculation;
D O I
10.1016/S0921-5107(99)00261-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a short review of some optical devices based on multilayered porous silicon, which can be easily obtained by varying the formation current during the etching process. These include Bragg reflectors and Fabry-Perot microcavities, which can be adjusted from the visible to the near infrared. The interface roughness, tragic in the case of multilayers, is studied. It can be drastically reduced when changing the electrolyte viscosity. The high reflectivities obtained in this way are measured by Cavity Ring-Down Spectroscopy. Problems occurring when realising thin layers and an efficient way to adjust precisely the optical thicknesses of the thin layers constituting the multilayered structure are also presented. Finally we present a method of calculation of the emission which takes absorption into account and is able to explain the angular dependence of the luminescence. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:34 / 42
页数:9
相关论文
共 24 条
[1]  
ARAKI M, 1996, P INT S ADV LUM MAT, P495
[2]   Method of source terms for dipole emission modification in modes of arbitrary planar structures [J].
Benisty, H ;
Stanley, R ;
Mayer, M .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1998, 15 (05) :1192-1201
[3]   RELATION BETWEEN SURFACE ROUGHNESS AND SPECULAR REFLECTANCE AT NORMAL INCIDENCE [J].
BENNETT, HE ;
PORTEUS, JO .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1961, 51 (02) :123-+
[4]  
BENSON TM, IN PRESS MAT SCI E B
[5]   Dielectric filters made of PS: Advanced performance by oxidation and new layer structures [J].
Berger, MG ;
ArensFischer, R ;
Thonissen, M ;
Kruger, M ;
Billat, S ;
Luth, H ;
Hilbrich, S ;
Theiss, W ;
Grosse, P .
THIN SOLID FILMS, 1997, 297 (1-2) :237-240
[6]  
BJORK G, 1995, SPONTANEOUS EMISSION, P189
[7]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[8]  
CHAZALVIEL JN, 1999, IN PRESS MAT SCI E B
[9]   THE REFLECTION OF ELECTROMAGNETIC WAVES FROM A ROUGH SURFACE [J].
DAVIES, H .
PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1954, 101 (07) :209-214
[10]   RAMAN-SCATTERING ENHANCEMENT BY OPTICAL CONFINEMENT IN A SEMICONDUCTOR PLANAR MICROCAVITY [J].
FAINSTEIN, A ;
JUSSERAND, B ;
THIERRYMIEG, V .
PHYSICAL REVIEW LETTERS, 1995, 75 (20) :3764-3767