State-of-art CW power density achieved at 26 GHz by AlGaN/GaN HEMTs

被引：25

作者：

Lee, C

Wang, H

Yang, J

Witkowski, L

Muir, M

Khan, MA

Saunier, P

机构：

[1] TriQuint Semicond Texas, Richardson, TX 75083 USA

[2] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 16期

关键词：

Power density;

D O I：

10.1049/el:20020603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The DC and microwave power-performance of metal organic chemical vapour deposition-grown AlGaN/GaN HEMTs on SiC substrate is reported. The devices exhibited high maximum cur-rent density of 1.1 A/mm with high peak extrinsic transconductance of 234 mS/mm. At 26 GHz, the devices achieved continuous-wave (CW) power density of 5 W/min with power-added-efficiency of 30.1 %, which represents the highest Output power density and associated power-added efficiency reported above 20 GHz.

引用

页码：924 / 925

页数：2

共 5 条

[1] High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates [J].