Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions

被引：31

作者：

Cheng, LW ^{[1
]}

Cheng, SL

Chen, JY

Chen, LJ

Tsui, BY

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] ITRI, Elect Res & Serv Org, Hsinchu, Taiwan

来源：

THIN SOLID FILMS | 1999年 / 355卷

关键词：

nickel silicide; nitrogen ion implantation; shallow junction;

D O I：

10.1016/S0040-6090(99)00546-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions have been investigated. The phase formation of nickel silicides on nitrogen implanted (001)Si was suppressed and shifted to a higher temperature compared to samples not implanted with nitrogen. The sheet resistance was found to be nearly constant in a wide range of temperature in nitrogen ion implanted samples. It indicates that low-resistivity NiSi is the dominant phase for the 1 x 10(15) N+/cm(2) implanted samples annealed at 400-750 degrees C and for the 2 x 10(15) N-2(+)/cm(2) implanted samples annealed at 400-800 degrees C. The diffusion of nickel atoms is thought to be retarded by the presence of nitrogen atoms. The presence of nitrogen ion can also improve the thermal stability of nickel disilicide. The effects of nitrogen on nickel silicide formation become more pronounced with an increase in the nitrogen dose up to a certain value. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：412 / 416

页数：5

共 12 条

[1] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J].

ALPERIN, ME ;

HOLLAWAY, TC ;

HAKEN, RA ;

GOSMEYER, CD ;

KARNAUGH, RV ;

PARMANTIE, WD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :141-149

[2] Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor [J].

Chao, TS ;

Liaw, MC ;

Chu, CH ;

Chang, CY ;

Chien, CH ;

Hao, CP ;

Lei, TF .

APPLIED PHYSICS LETTERS, 1996, 69 (12) :1781-1782

[3] THERMAL-STABILITY OF NISI2 ON HIGH-DOSE ION-IMPLANTED (001) SI [J].

CHEN, WJ ;

CHEN, LJ .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) :653-658

[4] Formation of C54-TiS2 in titanium on nitrogen-ion-implanted (001)Si with a thin interposing Mo layer [J].

Cheng, SL ;

Jou, JJ ;

Chen, LJ ;

Tsui, BY .

JOURNAL OF MATERIALS RESEARCH, 1999, 14 (05) :2061-2069

[5] Low-resistivity TiSi2 contacts on nitrogen implanted ultra-shallow junctions [J].

Cheng, SL ;

Chen, LJ ;

Tsui, BY .

MATERIALS CHEMISTRY AND PHYSICS, 1997, 50 (02) :172-175

[6] COMPARISON OF TRANSFORMATION TO LOW-RESISTIVITY PHASE AND AGGLOMERATION OF TISI2 AND COSI2 [J].

LASKY, JB ;

NAKOS, JS ;

CAIN, OJ ;

GEISS, PJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (02) :262-269

[7]

LAU CK, 1982, TECH DIG, P714

[8]

MAEX K, 1993, MAT SCI ENG R, V11, P53

[9] SELF-ALIGNED NICKEL-MONO-SILICIDE TECHNOLOGY FOR HIGH-SPEED DEEP-SUBMICROMETER LOGIC CMOS ULSI [J].

MORIMOTO, T ;

OHGURO, T ;

MOMOSE, HS ;

IINUMA, T ;

KUNISHIMA, I ;

SUGURO, K ;

KATAKABE, I ;

NAKAJIMA, H ;

TSUCHIAKI, M ;

ONO, M ;

KATSUMATA, Y ;

IWAI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (05) :915-922

[10] Compatibility of NiSi in the self-aligned silicide process for deep submicrometer devices [J].

Mukai, R ;

Ozawa, S ;

Yagi, H .

THIN SOLID FILMS, 1995, 270 (1-2) :567-572

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