MBE growth and properties of GaMnAs with high level of Zn acceptor incorporation

被引：11

作者：

Asubar, J. T. ^{[1
]}

Sato, S. ^{[1
]}

Jinbo, Y. ^{[1
]}

Uchitomi, N. ^{[1
]}

机构：

[1] Nagaoka Univ Technol, Dept Elect Engn, Nagaoka, Niigata, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 11期

关键词：

D O I：

10.1002/pssa.200669582

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaMnAs epitaxial films with high Zn incorporation level were prepared by molecular beam epitaxy. Our results indicate an increasing hole concentration p accompanied by decreasing Curie temperature T-C and transition towards metallic behavior of the epitaxial film properties with increasing level of Zn incorporation. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2778 / 2782

页数：5

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