Atomic-scale study of GaMnAs/GaAs layers

被引：71

作者：

Grandidier, B

Nys, JP

Delerue, C

Stiévenard, D

Higo, Y

Tanaka, M

机构：

[1] Inst Elect & Microelect Nord, IEMN, CNRS, UMR 8520,Dept ISEN, F-59046 Lille, France

[2] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan

[3] Japan Sci & Technol Corp, CREST, Tokyo, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 24期

关键词：

D O I：

10.1063/1.1322052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cross-sectional scanning tunneling microscopy was used to study GaMnAs diluted magnetic semiconductors grown by low temperature molecular beam epitaxy. The Ga1-xMnxAs layer, containing a concentration of x=0.005, shows that the dominant defect in the material is the arsenic antisite. Mn ions can also be resolved and show a signature distinct from the arsenic antisites. Spectroscopic measurements are perfomed to study the variation of the Fermi level between the Ga0.995Mn0.005As and GaAs layers. The Mn ions act as acceptor dopants. However, for x=0.005, the Mn concentration in comparison with the As antisite concentration is too small to induce a significant change of the Fermi level from the midgap position, preventing the layer from being ferromagnetic. (C) 2000 American Institute of Physics. [S0003-6951(00)03544-0].

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页码：4001 / 4003

页数：3

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