Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs

被引：58

作者：

Grandidier, B ^{[1
]}

Chen, HJ

Feenstra, RM

McInturff, DT

Juodawlkis, PW

Ralph, SE

机构：

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[2] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[3] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30322 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 10期

关键词：

D O I：

10.1063/1.123575

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning tunneling microscopy is used to study low temperature grown (LTG) InGaAs with and without Be doping. The Be-doped material is observed to contain significantly fewer As Ga antisite defects than the undoped material, with no evidence found for Be-As complexes. Annealing of the LTG-InGaAs forms precipitates preferentially in the undoped material. The previously observed dependence of the optical response time on Be doping and annealing is attributed to changes in the As antisite concentration and the compensation effect of the Be. (C) 1999 American Institute of Physics. [S0003-6951(99)00210-7].

引用

页码：1439 / 1441

页数：3

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