Trapping and recombination dynamics of low-temperature-grown InGaAs/InAlAs multiple quantum wells

被引:47
作者
Chen, Y [1 ]
Prabhu, SS
Ralph, SE
McInturff, DT
机构
[1] Emory Univ, Dept Phys, Atlanta, GA 30322 USA
[2] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
关键词
D O I
10.1063/1.120766
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have observed a long-lived residual photoconductivity in low-temperature-grown (LT) InGaAs. These results have significant consequences for devices comprised of LT-InGaAs, other defect moderated materials, and standard-temperature-grown InGaAs. Our investigation utilizes time-resolved terahertz conductivity to quantify the trapping and recombination rates of LT Be-doped In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells and bulk InGaAs. It is found that Be doping reduces the residual photoconductivity and increases the initial electron trapping rate. These results are in contrast to those observed via transient absorption studies, which suggest that these systems have returned to equilibrium after the initial transient. Furthermore, a 600 degrees C anneal increases both the trapping and recombination rate in all Be-doped samples. (C) 1998 American Institute of Physics.
引用
收藏
页码:439 / 441
页数:3
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