STRUCTURAL AND ELECTRICAL-PROPERTIES OF LOW-TEMPERATURE GAINAS

GaInAs lattice matched to InP was grown by molecular-beam epitaxy over a temperature range of 100-450-degrees-C and characterized by x-ray diffraction, resistivity, and secondary ion mass spectroscopy. X-ray diffraction analysis indicated the incorporation of excess As for samples grown below 250-degrees-C. As-grown GaInAs was n-type, with electrical concentration increasing with decreasing growth temperature, ranging from 5 X 10(14) cm-3 (450-degrees-C) to 1.8 X 10(17) (150-degrees-C). Secondary ion mass spectroscopy indicated that this behavior was not due to the incorporation of background n-type dopants. Be- and Si-doped GaInAs at 5 X 10(18) cm-3 showed full electrical activation for growth temperatures down to 260-degrees-C, with only partial activation for Si and no activation for Be for growth temperatures below 260-degrees-C.