OBSERVATION OF ARSENIC PRECIPITATES IN GAINAS GROWN AT LOW-TEMPERATURE ON INP

被引：23

作者：

IBBETSON, JP ^{[1
]}

SPECK, JS ^{[1
]}

GOSSARD, AC ^{[1
]}

MISHRA, UK ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 18期

关键词：

D O I：

10.1063/1.109418

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-crystal Ga1-xInxAs (x=0.4) grown on InP by molecular-beam epitaxy at low substrate temperatures (250-150-degrees-C) has been examined by transmission electron microscopy. Arsenic precipitates were observed following an ex situ anneal at 550-degrees-C. The precipitates coarsen during higher-temperature anneals at 600 and 700-degrees-C. Microstructure dependence on the growth temperature was similar to that observed in low-temperature grown GaAs. Arsenic precipitate volume fraction increased with decreasing growth temperature, with a measured maximum value of approximately 0.4%.

引用

页码：2209 / 2211

页数：3

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