Magnetic control of the valley degree of freedom of massive Dirac fermions with application to transition metal dichalcogenides

被引：155

作者：

Cai, Tianyi ^{[1
]}

Yang, Shengyuan A. ^{[2
]}

Li, Xiao ^{[3
]}

Zhang, Fan ^{[4
]}

Shi, Junren ^{[5
]}

Yao, Wang ^{[6
,7
]}

Niu, Qian ^{[3
,5
]}

机构：

[1] Soochow Univ, Sch Phys Sci & Technol, Suzhou 215006, Peoples R China

[2] Singapore Univ Technol & Design, Singapore 138682, Singapore

[3] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

[4] Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA

[5] Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China

[6] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[7] Univ Hong Kong, Ctr Theoret & Computat Phys, Hong Kong, Hong Kong, Peoples R China

来源：

PHYSICAL REVIEW B | 2013年 / 88卷 / 11期

关键词：

BERRY PHASE; POLARIZATION; MOS2;

D O I：

10.1103/PhysRevB.88.115140

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the valley-dependent magnetic and transport properties of massive Dirac fermions in multivalley systems such as transition metal dichalcogenides. The asymmetry of the zeroth Landau level between valleys and the enhanced magnetic susceptibility can be attributed to the different orbital magnetic moment tied with each valley. This allows the valley polarization to be controlled by tuning the external magnetic field and the doping level. As a result of this magnetic-field-induced valley polarization, there exists an extra contribution to the ordinary Hall effect. All these effects can be captured by a low-energy effective theory with a valley-orbit coupling term.

引用

页数：8

共 46 条

[11]

Jones AM, 2013, NAT NANOTECHNOL, V8, P634, DOI [10.1038/NNANO.2013.151, 10.1038/nnano.2013.151]

[12] Anomalous Hall effect in ferromagnetic semiconductors [J].

Jungwirth, T ;

Niu, Q ;

MacDonald, AH .

PHYSICAL REVIEW LETTERS, 2002, 88 (20) :4-207208

[13] Low-temperature photocarrier dynamics in monolayer MoS2 [J].

Korn, T. ;

Heydrich, S. ;

Hirmer, M. ;

Schmutzler, J. ;

Schueller, C. .

APPLIED PHYSICS LETTERS, 2011, 99 (10)

[14] Epitaxial growth of a silicene sheet [J].

Lalmi, Boubekeur ;

Oughaddou, Hamid ;

Enriquez, Hanna ;

Kara, Abdelkader ;

Vizzini, Sebastien ;

Ealet, Benidicte ;

Aufray, Bernard .

APPLIED PHYSICS LETTERS, 2010, 97 (22)

[15] Unconventional Quantum Hall Effect and Tunable Spin Hall Effect in Dirac Materials: Application to an Isolated MoS2 Trilayer [J].

Li, Xiao ;

Zhang, Fan ;

Niu, Qian .

PHYSICAL REVIEW LETTERS, 2013, 110 (06)

[16] Atomically Thin MoS2: A New Direct-Gap Semiconductor [J].

Mak, Kin Fai ;

Lee, Changgu ;

Hone, James ;

Shan, Jie ;

Heinz, Tony F. .

PHYSICAL REVIEW LETTERS, 2010, 105 (13)

[17]

Mak KF, 2013, NAT MATER, V12, P207, DOI [10.1038/nmat3505, 10.1038/NMAT3505]

[18]

Mak KF, 2012, NAT NANOTECHNOL, V7, P494, DOI [10.1038/nnano.2012.96, 10.1038/NNANO.2012.96]

[19]

Marder P., 2010, CONDENSED MATTER PHY

[20] DIAMAGNETISM OF GRAPHITE [J].

MCCLURE, JW .

PHYSICAL REVIEW, 1956, 104 (03) :666-671

← 1 2 3 4 5 →