3D-TOFSIMS characterization of black spots in polymer light emitting diodes

被引：17

作者：

Bulle-Lieuwma, C. W. T. ^{[1
]}

van de Weiier, P. ^{[1
]}

机构：

[1] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

来源：

APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 19期

关键词：

PolyLED devices; black spots; time-of-flight; resistivity; cathode;

D O I：

10.1016/j.apsusc.2006.02.103

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The occurrence and formation of black spots areas in PolyLED devices has been studied by time-of-flight SIMS (TOFSIMS). The composition, shape and position of the black spots is visualised by three-dimensional (3D)-TOFSIMS depth-profiling. It has been established that the formation of non-emissive spots is due to the growth of aluminium, oxide clusters at the AIBa/polymer interface. Electron injection in the black spots is lost by the resulting local increase of the resistivity of the cathode. (c) 2006 Published by Elsevier B.V.

引用

页码：6597 / 6600

页数：4

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