Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface

被引：82

作者：

Bergman, JP ^{[1
]}

Lundstrom, T ^{[1
]}

Monemar, B ^{[1
]}

Amano, H ^{[1
]}

Akasaki, I ^{[1
]}

机构：

[1] MEIJO UNIV,DEPT ELECT & ELECT ENGN,NAGOYA,AICHI,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 23期

关键词：

D O I：

10.1063/1.117250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report photoluminescence (PL) spectra related to a two-dimensional electron gas confined at a GaN/AlGaN heterointerface. The recombination between electrons confined in the bottom of the interface potential and photoexcited holes causes a broad PL emission about 50 meV below the GaN exciton emissions. A second emission, attributed to the recombination of electrons in the first excited level at the interface, is also observed close to the excitonic band gap in GaN. The data agree with a self-consistent calculation of the energy levels and electron concentration at the interface. (C) 1996 American Institute of Physics.

引用

页码：3456 / 3458

页数：3

共 16 条

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