Aluminum doped zinc oxide for organic photovoltaics

被引：119

作者：

Murdoch, G. B. ^{[1
]}

Hinds, S. ^{[1
]}

Sargent, E. H. ^{[1
]}

Tsang, S. W. ^{[1
]}

Mordoukhovski, L. ^{[1
]}

Lu, Z. H. ^{[1
]}

机构：

[1] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 21期

关键词：

aluminium; electrical conductivity; II-VI semiconductors; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; SOLAR-CELLS; DEPOSITION; FILMS;

D O I：

10.1063/1.3142423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aluminum doped zinc oxide (AZO) was grown via magnetron sputtering as a low-cost alternative to indium tin oxide (ITO) for organic photovoltaics (OPVs). Postdeposition ozone treatment resulted in devices with lower series resistance, increased open-circuit voltage, and power conversion efficiency double that of devices fabricated on untreated AZO. Furthermore, cells fabricated using ozone treated AZO and standard ITO displayed comparable performance.

引用

页数：3

共 13 条

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