Field emission properties of boron and nitrogen doped carbon nanotubes

被引：128

作者：

Sharma, R. B.

Late, D. J.

Joag, D. S.

Govindaraj, A.

Rao, C. N. R.

机构：

[1] CSIR, Ctr Excellence Chem, Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India

[2] INS Shivaji, Lonavla 410402, India

[3] Univ Poona, Ctr Adv Studies Mat Sci & Solid State Phys, Dept Phys, Pune 411007, Maharashtra, India

来源：

CHEMICAL PHYSICS LETTERS | 2006年 / 428卷 / 1-3期

关键词：

D O I：

10.1016/j.cplett.2006.06.089

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Field electron emission (FE) properties of boron and nitrogen doped carbon nanotubes (CNTs) grown in situ on tungsten (W) tips and silicon substrates have been studied. For a total emission current of I mu A, the current density (J) was 4 A/cm(2) at 368 V/mu m for B-doped CNTs and at 320 V/mu m for N-doped CNTs grown on W tips, compared with the value of 1.5 A/cm(2) at 290 V/mu m for undoped CNTs. FE currents upto 400 mu A drawn from both B- and N-doped CNTs are stable for more than 3 h. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：102 / 108

页数：7

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