Nano electro mechanics of semiconducting carbon nanotube

被引：12

作者：

Peng, S ^{[1
]}

Cho, K ^{[1
]}

机构：

[1] Stanford Univ, Dept Mech Engn, Div Mech & Computat, Stanford, CA 94305 USA

来源：

JOURNAL OF APPLIED MECHANICS-TRANSACTIONS OF THE ASME | 2002年 / 69卷 / 04期

关键词：

D O I：

10.1115/1.1469003

中图分类号：

O3 [力学];

学科分类号：

08 ; 0801 ;

摘要：

The effect of a flattening distortion on the electronic properties of a semiconducting carbon nanotube is investigated through first-principles calculations. As a function of the mechanical deformation, electronic bandgap is reduced leading to a semiconductor-metal transition. However, further deformation reopens the bandgap and induces a metal-semiconductor transition. The semiconductor-metal transitions take place as a result of curvature-induced hybridization effects, and this finding can be applied to develop novel nano electro mechanical systems.

引用

页码：451 / 453

页数：3

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