High-pressure synthesis at the origin of new developments in silicon clathrate physical chemistry

被引:19
作者
Reny, E [1 ]
Yamanaka, S
Cros, C
Pouchard, M
机构
[1] Hiroshima Univ, Fac Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan
[2] CNRS, Inst Chim Mat Condensee Bordeaux, UPR 9048, F-33608 Pessac, France
关键词
D O I
10.1088/0953-8984/14/44/459
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Since their discovery in 1965, various compositions of clathrate phases of silicon have been investigated and have revealed a direct correlation between the doping element and their properties. The recent development of a new synthesis technique using high-pressure and high-temperature (HPHT) conditions allows the synthesis of peculiar clathrate compositions which can show fascinating properties, such as Ba8Si46 which is a sp(3) silicon-based structure with superconducting characteristics. This work reports the synthesis of the first binary silicon clathrate doped with an electronegative element and prepared using HPHT: I8Si46-xIx. Some chemical and structural results are also presented.
引用
收藏
页码:11233 / 11236
页数:4
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