The Influence of Channel Compositions on the Electrical Properties of Solution-Processed Indium-Zinc Oxide Thin-Film Transistors

被引：16

作者：

Chen, Chang-Ken ^{[1
]}

Hsieh, Hsing-Hung ^{[1
]}

Shyue, Jing-Jong ^{[2
]}

Wu, Chung-Chih ^{[1
,3
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

[2] Acad Sinica, Res Ctr Appl Sceiences, Taipei 115, Taiwan

[3] Natl Taiwan Univ, Dept Elect Engn, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

来源：

JOURNAL OF DISPLAY TECHNOLOGY | 2009年 / 5卷 / 12期

关键词：

Channel compositions; indium-zinc oxide (IZO); oxide semiconductors; solution processing; thin-film transistors (TFTs); CARRIER TRANSPORT; TRANSPARENT; SEMICONDUCTORS; FABRICATION;

D O I：

10.1109/JDT.2009.2024437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical properties of indium-zinc oxide (IZO) thin-film-transistors (TFTs) based on solution processes with various channel compositions are investigated in this paper. Amorphous IZO thin films with high transparency and smooth/uniform surfaces are deposited by spin-coating. The In:Zn ratio is varied by adjusting the precursor compositions, and its influences on the electrical properties, such as resistivity, mobility, and threshold voltage, etc., of IZO films and TFTs are studied. The devices showed field effect mobility ranging from 0.07 to 2.13 cm(2)/V . s with the In component (In/(In + Zn)) varying from 0.2 to 0.5.

引用

页码：509 / 514

页数：6

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