Origin of defects in CuIn1-xGaxSe2 solar cells with varied Ga content
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Eisenbarth, T.
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Helmholtz Zentrum Berlin Mat & Energie GmbH, Abt SE3, D-14109 Berlin, GermanyHelmholtz Zentrum Berlin Mat & Energie GmbH, Abt SE3, D-14109 Berlin, Germany
Eisenbarth, T.
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Unold, T.
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Helmholtz Zentrum Berlin Mat & Energie GmbH, Abt SE3, D-14109 Berlin, GermanyHelmholtz Zentrum Berlin Mat & Energie GmbH, Abt SE3, D-14109 Berlin, Germany
Unold, T.
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Caballero, R.
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Helmholtz Zentrum Berlin Mat & Energie GmbH, Abt SE3, D-14109 Berlin, GermanyHelmholtz Zentrum Berlin Mat & Energie GmbH, Abt SE3, D-14109 Berlin, Germany
Caballero, R.
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Kaufmann, C. A.
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Helmholtz Zentrum Berlin Mat & Energie GmbH, Abt SE3, D-14109 Berlin, GermanyHelmholtz Zentrum Berlin Mat & Energie GmbH, Abt SE3, D-14109 Berlin, Germany
Kaufmann, C. A.
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Abou-Ras, D.
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Helmholtz Zentrum Berlin Mat & Energie GmbH, Abt SE3, D-14109 Berlin, GermanyHelmholtz Zentrum Berlin Mat & Energie GmbH, Abt SE3, D-14109 Berlin, Germany
Abou-Ras, D.
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Schock, H. -W.
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Helmholtz Zentrum Berlin Mat & Energie GmbH, Abt SE3, D-14109 Berlin, GermanyHelmholtz Zentrum Berlin Mat & Energie GmbH, Abt SE3, D-14109 Berlin, Germany
Schock, H. -W.
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[1] Helmholtz Zentrum Berlin Mat & Energie GmbH, Abt SE3, D-14109 Berlin, Germany
A series of CuIn1-xGaxSe2 solar cells with varied Ga content (O <= x <= 1) was prepared using a three-stage co-evaporation process. The grain sizes of these devices vary with gallium content, exhibiting a maximum for approximately x=0.2, which does not coincide with the maximum of the solar conversion efficiency observed between 0.34<x<0.37 for these devices. Admittance spectroscopy and drive-level capacitance profiling measurements were performed yielding a defect level with an activation energy of E-a=0.1 eV which is independent of the amount of Ga and the grain size respectively. This defect closely resembles the N1 defect level reported in the literature. Only for relatively high Ga contents (x>0.7) an additional defect appears. An equivalent circuit model describing a parallel connection of bulk and grain boundary capacitors allows us to conclude that the detected shallow defect is not predominantly located at the grain boundaries. (C) 2008 Elsevier B.V. All rights reserved.
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页码:2244 / 2247
页数:4
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[1]
Abou-Ras D, 2007, PHYS STATUS SOLIDI-R, V1, P187, DOI [10.1002/pssr.200701137, 10.1002/pssr.2007Q1137]