Co interaction with clean silicon surfaces

被引：42

作者：

Dolbak, AE ^{[1
]}

Olshanetsky, BZ ^{[1
]}

Teys, SA ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST SEMICOND PHYS,SIBERIAN BRANCH,NOVOSIBIRSK 630090,RUSSIA

来源：

SURFACE SCIENCE | 1997年 / 373卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

Auger electron spectroscopy; cobalt; low energy electron diffraction; low index single crystal surfaces; semiconducting surfaces; silicon; surface diffusion; surface structure;

D O I：

10.1016/S0039-6028(96)01150-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The interaction of cobalt with clean silicon surfaces has been studied by low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES). A number of previously unknown surface structures was observed on Si(111), (100) and (110) surfaces at Co submonolayer coverages. Correlation between the surface structures and Co surface concentration has been investigated in a wide range of sample temperatures in the solid phase epitaxy (SPE) and molecular beam epitaxy (MBE) modes. Co diffusion coefficients on Si surfaces have been evaluated. It follows from our data that they do not exceed the coefficients of Co diffusion in Si bulk. (C) 1997 Elsevier Science B.V.

引用

页码：43 / 55

页数：13

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