High-Speed Operation of Vertical Type Organic Transistors Utilizing Step-Edge Structures

被引：29

作者：

Takano, Tomoki ^{[1
]}

Yamauchi, Hiroshi ^{[1
]}

Iizuka, Masaaki ^{[2
]}

Nakamura, Masakazu ^{[1
]}

Kudo, Kazuhiro ^{[1
]}

机构：

[1] Chiba Univ, Grad Sch Engn, Inage Ku, Chiba 2638522, Japan

[2] Chiba Univ, Fac Educ, Inage Ku, Chiba 2638522, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 07期

关键词：

THIN-FILM TRANSISTORS; STATIC INDUCTION TRANSISTOR; FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE; CHANNEL; FABRICATION; ARCHITECTURE;

D O I：

10.1143/APEX.2.071501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An organic transistor having a novel structure, step-edge vertical-channel organic field-effect transistor (SVC-OFET), with a short channel length has been fabricated by a low-cost self-alignment process. The short channel is formed in the vertical direction along the side wall of a step-edge structure. The SVC-OFET structure also has an advantage in reducing the parasitic capacitance between the gate and drain electrodes. A short channel and reduced capacitance are important properties for a high-speed operation. The cutoff frequency achieved was approximately 900 kHz, which is a very high value for organic transistors. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

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