Ultrafast electron transport in layered semiconductors studied with femtosecond-laser photoemission

被引：22

作者：

Rettenberger, A ^{[1
]}

Leiderer, P ^{[1
]}

Probst, M ^{[1
]}

Haight, R ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.56.12092

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Femtosecond-laser photoemission was used to investigate the electron dynamics in the layered semiconductors MoSe2 and WSe2. Photoexcitation with 200-fs pulses of 2.03 eV light creates an electron gas with significant excess energy. Our measurements reveal a strong transient enhancement in the diffusive transport of the most energetic electrons relative to the conduction-band minimum. Additionally, we demonstrate that the surfaces of these layered chalcogenides are electronically passivated and we give an upper bound for the density of defect states within the band gap.

引用

页码：12092 / 12095

页数：4

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